Low-Frequency Noise in III-V Nitride 2D Electron and Hole Gases
| dc.contributor.author | Leclerc, Nima | |
| dc.date.accessioned | 2021-02-15T14:44:31Z | |
| dc.date.available | 2021-02-15T14:44:31Z | |
| dc.date.issued | 2020-05-23 | |
| dc.description.abstract | Following the use of the Mg-doped GaN for p-channel transistor channels, the manipulation of holes and their interactions with phonons, impurities, and dislocations remains a fundamental challenge. p-channel GaN electronics have received recent interest due to the relatively high hole mobility in AlN-GaN polarization induced two-dimensional hole gases (2DHGs). Although the mobility-limiting scattering mechanisms in 2DHGs is understood, the origins of 1/f noise in these channels is not. We introduce a characterization technique and stochastic model to identify 1/f noise mechanisms in a two-dimensional electron gas which can be extended to the 2DHG. | en_US |
| dc.identifier.doi | https://doi.org/10.7298/2p3y-9q97 | |
| dc.identifier.uri | https://hdl.handle.net/1813/102812 | |
| dc.language.iso | en_US | en_US |
| dc.rights | CC0 1.0 Universal | * |
| dc.rights.uri | http://creativecommons.org/publicdomain/zero/1.0/ | * |
| dc.title | Low-Frequency Noise in III-V Nitride 2D Electron and Hole Gases | en_US |
| dc.type | dissertation or thesis | en_US |
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