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Data from: Current-induced switching of thin film α-Fe2O3 devices imaged using a scanning single-spin microscope

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dc.contributor.authorQiaochu Guo
dc.contributor.authorAnthony D’Addario
dc.contributor.authorYang Cheng
dc.contributor.authorJeremy Kline
dc.contributor.authorIsaiah Gray
dc.contributor.authorHil Fung Harry Cheung
dc.contributor.authorFengyuan Yang
dc.contributor.authorKatja C. Nowack
dc.contributor.authorGregory D. Fuchs
dc.date.accessioned2023-12-12T18:29:48Z
dc.date.available2023-12-12T18:29:48Z
dc.date.issued2023-06-05
dc.description.abstractElectrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe2O3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe2O3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. We repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [¯1¯120] and [11¯20], suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe2O3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe2O3. We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.
dc.description.sponsorshipThis work is primarily supported by the National Science Foundation (Grant No. DMR-2004466). Quantitative peak tracking was developed with support by the U.S. Department of Energy (DOE), Office of Science, National Quantum Information Science Research Centers (Grant No. 1F-60510). The PCB-based microwave resonator was developed with support from the U.S. DOE, Office of Science, Basic Energy Sciences (Grant No. DE-SC0019250). The development of the scanning NV microscope setup was supported by the Cornell Center for Materials Research (CCMR) with funding from the NSF MRSEC program (Grant No. DMR-1719875), including capital equipment support by CCMR and the Kavli Institute at Cornell. Sample growth is supported by the U.S. DOE, Office of Science, Basic Energy Sciences (Grant No. DE-SC0001304).
dc.identifier.urihttps://hdl.handle.net/1813/113795
dc.language.isoen_US
dc.publisherAmerican Physical Society
dc.relation.doi10.1103/PhysRevMaterials.7.064402
dc.rightsCC0 1.0 Universalen
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/
dc.subjectMagnetization switching
dc.subjectNV centers
dc.subjectSpin-orbit torque
dc.subjectSpintronics
dc.subjectAntiferromagnets
dc.subjectScanning probe microscopy
dc.titleData from: Current-induced switching of thin film α-Fe2O3 devices imaged using a scanning single-spin microscope
dc.typearticle

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